This datasheet details the Toshiba 1SS294, a silicon epitaxial Schottky barrier diode designed for low-voltage, high-speed switching applications. It specifies maximum ratings such as 45V reverse voltage, 300mA peak forward current, and 150mW power dissipation. Electrical characteristics include forward voltage (0.28V to 0.60V) and reverse current (5µA max). The device is packaged in a SC-59 case and is suitable for use within specified operating ranges to ensure reliability and safety.
| Maximum Reverse Voltage | 45 V |
|---|---|
| Maximum Forward Current | 300 mA |
| Power Dissipation | 150 mW |
| Total Capacitance | 18–25 pF |
The maximum reverse voltage rating is 45 V.
The maximum reverse voltage rating is 45 V.
The maximum power dissipation is 150 mW.
The typical forward voltage at 100 mA is 0.54 V.