This datasheet provides electrical specifications for the Toshiba 1SS311 silicon epitaxial planar diode, including maximum ratings and test conditions. It highlights features such as low forward voltage, high voltage capability, and fast reverse recovery time. The document also includes graphical data for forward and reverse voltage characteristics, as well as capacitance vs. reverse voltage curves.
| Maximum Reverse Voltage | 420 V |
|---|---|
| Reverse Voltage | 400 V |
| Maximum Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Package | SC-59 |
| Junction Temperature | 125 °C |
The maximum reverse voltage rating is 420 V.
The package type is SC-59.