This datasheet details the Toshiba 1SS309, a silicon epitaxial planar diode designed for ultra high speed switching applications. It specifies electrical characteristics including forward voltage, reverse voltage, reverse recovery time, and total capacitance. The document also includes maximum ratings such as maximum reverse voltage (85V), average forward current (100mA), and junction temperature (125°C). The diode is packaged in SC-74A and features a low forward voltage of 0.90V (typical) at 100mA.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Average Forward Current | 100 mA |
| Reverse Recovery Time | 1.6 ns (Typ.) |
| Total Capacitance | 0.9 pF (Typ.) |
The maximum reverse voltage rating is 85V.
The reverse recovery time is 1.6 nanoseconds (typical).