This datasheet details the Toshiba 1SS308, a silicon epitaxial planar diode designed for ultra high speed switching applications. It specifies electrical characteristics including forward voltage, reverse recovery time, and total capacitance. The diode is packaged in SC-74A and rated for 80V reverse voltage and 300mA peak forward current. Maximum ratings include 125°C junction temperature and 200mW power dissipation. The document includes graphs for forward voltage vs. reverse voltage and reverse recovery time vs. forward current.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Reverse Voltage | 80 V |
| Maximum Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Reverse Recovery Time | 1.6 ns |
| Total Capacitance | 2.2 pF |
| Reverse Current (30V) | 0.1 mA |
The reverse recovery time is 1.6 ns (typical).
The maximum reverse voltage rating is 85 V.