This datasheet details the Toshiba 1SS301, a silicon epitaxial planar diode designed for ultra high speed switching applications. It features a low forward voltage of 0.90V (typical) and fast reverse recovery time of 1.6ns (typical). The diode is packaged in a small SC-70 case and rated for a maximum reverse voltage of 80V and average forward current of 100mA. Electrical characteristics and maximum ratings are provided for operating temperatures from -55°C to +125°C.
The document includes graphs showing forward voltage vs. reverse voltage, capacitance vs. reverse voltage, and reverse recovery time vs. forward current. It also includes a warning about the inherent electrical sensitivity of semiconductor devices and the responsibility of the user to ensure safe operation within specified ranges.
| Maximum Reverse Voltage | 80 V |
|---|---|
| Average Forward Current | 100 mA |
| Reverse Recovery Time | 1.6 ns (typical) |
| Total Capacitance | 0.9 pF (typical) |
| Package Type | SC-70 |
| Forward Voltage (10mA) | 0.72 V |
| Reverse Current (30V) | 0.1 pA |
| Junction Temperature | 125 °C |
The maximum reverse voltage rating is 80V.
The typical forward voltage at 10mA is 0.72V.
The reverse recovery time is 1.6ns (typical).
The 1SS301 is in an SC-70 package.