This document is a datasheet for the Toshiba 1SS312 silicon epitaxial planar diode. It details maximum ratings such as reverse voltage (30V) and forward current (50mA). Electrical characteristics include forward voltage (0.85V at 2mA), reverse current (0.1µA at 15V), and capacitance (1.2pF max). The diode is designed for VHF tuner band switch applications and is packaged in a JEDEC SC-70 format. Safety and usage guidelines are included for proper application.
| Reverse Voltage | 30 V |
|---|---|
| Forward Current | 50 mA |
| Junction Temperature | 125 °C |
| Forward Voltage | 0.85 V |
| Reverse Current | 0.1 µA |
| Total Capacitance | 1.2 pF |
| Series Resistance | 0.6 Ω |
The maximum reverse voltage rating is 30V.
The forward voltage at 2mA is 0.85V.
The package type is JEDEC SC-70.