This document provides electrical specifications for the Toshiba 1SS268 silicon epitaxial planar diode. It includes maximum ratings such as reverse voltage (30V) and forward current (50mA), along with electrical characteristics like forward voltage and total capacitance. The datasheet also features graphs illustrating series resistance, forward current, and reverse voltage behavior under specified conditions.
| Reverse Voltage | 30 V |
|---|---|
| Forward Current | 50 mA |
| Junction Temperature | 125 °C |
| Series Resistance | 0.6 Ω (Typ.) |
The maximum reverse voltage rating is 30 V.
The typical series resistance is 0.6 Ω.
The maximum forward current rating is 50 mA.