This datasheet provides technical specifications for the Toshiba 188306, a silicon epitaxial planar diode designed for high voltage and high speed switching applications. Key parameters include a maximum reverse voltage of 250V, forward current ratings up to 300mA, and a reverse recovery time of 30ns. The device is packaged in a small SC-61 case and is suitable for applications requiring low forward voltage and small total capacitance.
The document includes electrical characteristics such as forward voltage, reverse current, and capacitance, along with graphs illustrating voltage-current relationships and reverse recovery time. Toshiba advises users to operate the device within specified ranges and to consider safety standards to avoid potential failure or damage.
| Maximum Reverse Voltage | 250 V |
|---|---|
| Forward Current (Average) | 100 mA |
| Reverse Recovery Time | 30 ns (Max.) |
| Total Capacitance | 1.5 pF (Typ.) |
| Package Type | SC-61 |
The maximum reverse voltage rating is 250V.
The reverse recovery time is 30ns maximum.
The device is packaged in an SC-61 case.