This datasheet details the Toshiba 1SS302 silicon epitaxial planar diode, designed for ultra high speed switching applications. It features a low forward voltage of 0.90V (typical) and a fast reverse recovery time of 1.6ns (typical). The diode is packaged in a small SC-70 case and rated for a maximum reverse voltage of 80V and average forward current of 100mA. Electrical characteristics and test conditions are provided for both forward and reverse bias operations, including capacitance and recovery time measurements.
| Maximum Reverse Voltage | 80V |
|---|---|
| Average Forward Current | 100mA |
| Reverse Recovery Time | 1.6ns (typical) |
| Total Capacitance | 0.9pF (typical) |
| Forward Voltage at 10mA | 0.72V |
The maximum reverse voltage rating is 80V.
The typical reverse recovery time is 1.6ns.
The forward voltage at 10mA is 0.72V.