This datasheet details the Toshiba 1SS307 silicon epitaxial planar diode, designed for general-purpose rectifier applications. It specifies electrical characteristics including forward voltage, reverse current, and total capacitance. The document also includes maximum ratings such as reverse voltage, forward current, and junction temperature. Graphs illustrate forward voltage vs. current, capacitance vs. reverse voltage, and power dissipation vs. temperature.
| Maximum Reverse Voltage | 35 V |
|---|---|
| Reverse Current | 0.1 nA (typical) |
| Total Capacitance | 3.0 pF (typical) |
| Package Type | SC-59 |
| Power Dissipation | 150 mW |
| Junction Temperature | 125 °C |
The maximum reverse voltage is 35 V.
The typical forward voltage is 1.0 V.
The package type is SC-59.
The maximum junction temperature is 125 °C.