This document provides electrical specifications for the Toshiba 1SS293, a silicon epitaxial Schottky barrier diode. It includes maximum ratings such as 45V reverse voltage and 300mA forward current. Electrical characteristics like forward voltage (0.54V typical at 100mA) and reverse current (5µA max) are detailed. The datasheet also includes graphs showing voltage-current relationships and total capacitance (18–25pF at 1MHz).
| Maximum Reverse Voltage | 45 V |
|---|---|
| Maximum Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Power Dissipation | 300 mW |
| Forward Voltage (100mA) | 0.54 V |
| Reverse Current | 5 µA |
| Total Capacitance | 18–25 pF |
45 V (maximum peak reverse voltage).
0.54 V.
5 µA at 40V reverse voltage.
300 mW.