This datasheet details the Toshiba 1SS295, a silicon epitaxial Schottky barrier diode designed for UHF band mixer applications. It specifies maximum ratings such as reverse voltage (4V), forward current (30mA), and junction temperature (125°C). Electrical characteristics include forward voltage (0.25–0.382V at 2mA), reverse current (≤25μA at 0.5V), and capacitance values. The device is packaged in a small SC-59 case and is intended for use within specified operating ranges to ensure reliability.
| Reverse Voltage | 4 V |
|---|---|
| Forward Current | 30 mA |
| Junction Temperature | 125 °C |
| Forward Voltage | 0.25–0.382 V |
| Reverse Current | ≤25 μA |
| Total Capacitance | 0.6–0.9 pF |
| Delta Forward Voltage | 10 mV |
| Delta Total Capacitance | 0.1 pF |
The maximum reverse voltage rating is 4V.
The forward current rating is 30mA.
The maximum junction temperature is 125°C.
The typical forward voltage at 2mA is 0.382V.