This document provides electrical characteristics and maximum ratings for the Toshiba 1SS250 silicon epitaxial planar diode. It is designed for high-speed switching applications and features low forward voltage, fast reverse recovery time, and small total capacitance. The diode is packaged in SC-59 and rated for operation up to 125°C junction temperature.
The datasheet includes test conditions, graphs for forward voltage, reverse voltage, capacitance, and reverse recovery time, as well as compliance with Toshiba’s reliability standards.
| Peak Reverse Voltage | 250 V |
|---|---|
| Reverse Voltage | 200 V |
| Peak Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Surge Current (10ms) | 2 A |
| Power Dissipation | 150 mW |
| Junction Temperature | 125 °C |
| Storage Temperature Range | -55~125 °C |
| Reverse Current (200V) | 1.0 µA |
| Total Capacitance | 1.5 pF |
| Reverse Recovery Time | 60 ns |
The peak reverse voltage is 250 V.
The reverse recovery time is 60 ns.
The package type is SC-59.