TPC8106-H is a high-performance, high-efficiency field-effect transistor produced by Toshiba Corporation. It is mainly used in lithium-ion batteries, notebook computers, and portable devices. The transistor has the characteristics of miniaturization, high speed switching, low gate charge, low leakage current, and low on-resistance.
This document is a technical datasheet for the Toshiba TPC8106-H, an enhancement-mode Silicon P Channel MOS Type Field Effect Transistor. It features a High Speed U-MOSII design optimized for high efficiency in DC-DC converter circuits, specifically targeting lithium-ion battery and notebook PC applications.
The device offers key performance characteristics including low drain-source ON resistance (Rds(ON) = 14mΩ typ.), small gate charge (Qg = 52 nC typ.), and a compact footprint. The datasheet provides comprehensive electrical specifications, thermal characteristics, safe operating area graphs, and application circuit diagrams.
| Gate threshold voltage (Vth) | -0.8 ~ -2.0 V |
|---|---|
| Drain-source ON resistance (Rds(ON)) | 14 mΩ typ. |
| Total gate charge (Qg) | 52 nC typ. |
The document lists high speed and high efficiency DC-DC converters, lithium ion battery applications, notebook PC applications, and portable equipment applications.
The maximum drain-source voltage rating is -30 V.