This document describes the features and characteristics of the TPC8107 field effect transistor, which is suitable for lithium-ion battery applications, notebook PC applications, and portable equipment applications. It has a small and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, etc.
This document is a technical datasheet for the Toshiba TPC8107, an electrostatic-sensitive Field Effect Transistor (FET) of the Silicon P-Channel MOS type. It is specifically optimized for applications such as lithium-ion battery management, notebook PCs, and portable equipment due to its small footprint and low drain-source ON resistance.
| Drain-source voltage (VDS) | -30 V |
|---|---|
| Gate threshold voltage (Vth) | -0.8 to -2.0 V |
| Drain-source ON resistance (RDS(ON)) | 5.5 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 31 S (typ.) |
| Drain power dissipation (t=10s) | 1.9 W |
| Channel temperature (Tch) | 150 °C |
The TPC8107 is intended for use in lithium ion battery, notebook PC, and portable equipment applications.
A typical weight for the device is 0.080 g.
The package measures 25.4 x 25.4 x 0.8 mm.