TPC8110 is a P-channel MOS type (U-MOS III) field effect transistor produced by Toshiba. It is mainly used in lithium ion batteries, notebook PCs and portable equipment. The transistor has the characteristics of small size, low on-resistance, high transmission gain and low leakage current.
This document is a technical datasheet for the Toshiba TPC8110, an enhancement-mode Silicon P-Channel MOSFET. It highlights key features such as a small footprint due to its thin package, low drain-source ON resistance of 17 mΩ (typical), and high forward transfer admittance of 16 S (typical). The device is specifically noted for applications in lithium-ion batteries, notebook PCs, and portable equipment.
| Drain-source voltage (Vdss) | -40 V |
|---|---|
| Gate threshold voltage (Vth) | -0.8 to -2.0 V |
| Drain-source ON resistance (Rds(ON)) | 17 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 16 S (typ.) |
| Drain power dissipation (t=10s) | 2.6 W |
| Channel temperature (Tch) | 150 °C |
The device is intended for lithium-ion battery, notebook PC, and portable equipment applications.
The document lists lithium ion battery, notebook PC, and portable equipment applications.