TPC8210 is a N-channel MOS transistor manufactured by Toshiba. It is mainly used in lithium ion batteries, portable devices and notebook PCs. The transistor features low leakage current, high output impedance and low switching loss.
This document is a technical datasheet for the Toshiba TPC8210, an enhancement-mode silicon N-channel MOS type field effect transistor (U-MOS III). It specifies key parameters such as low drain-source ON resistance of 11 mΩ typical and high forward transfer admittance of 13 S typical. The device is designed for applications including lithium-ion batteries, portable equipment, and notebook PCs.
| Drain-source ON resistance (typical) | 11 mΩ |
|---|---|
| Forward transfer admittance (typical) | 13 S |
| Leakage current (max) | 10 pA |
| Gate threshold voltage range | 1.3 to 2.5 V |
| Drain-source breakdown voltage (max) | 30 V |
The TPC8210 is intended for lithium-ion battery, portable equipment, and notebook PC applications.
The maximum channel temperature rating is 150 °C.