TPC8207 is a N-channel MOS field effect transistor produced by Toshiba. It features a small and thin package, low resistance, high transfer gain and low leakage current, and is suitable for use in lithium-ion batteries, notebooks and portable devices.
This document is a technical datasheet for the Toshiba TPC8207, an N-channel enhancement-mode Field Effect Transistor (MOS Type U-MOSIII). It is designed for applications including lithium-ion batteries, notebook PCs, and portable equipment. The device features a small footprint with low drain-source ON resistance.
| Drain-source voltage (Vdss) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5~1.2 V |
| Drain-source ON resistance (Rds(on)) | 16 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 11 S (typ.) |
| Drain power dissipation (Pd) single device | 1.5 W |
| Channel temperature (Tch) | 150 °C |
The typical drain-source ON resistance is 16 mΩ.
The device measures 25.4 x 25.4 x 0.8 mm.