TPC8202 is a N-channel MOS type field effect transistor produced by Toshiba. It has the characteristics of 2.5V gate drive, small size, low leakage current, low on-resistance, and is suitable for lithium ion batteries, portable devices, and notebook computers.
This document is a datasheet for the Toshiba TPC8202, an N-channel enhancement-mode Field Effect Transistor (MOS Type 1T-MOSVI). It is designed specifically for Lithium Ion Battery and Portable Equipment Applications, such as Notebook PCs. The device features a small footprint due to its thin package and offers low drain-source ON resistance with high forward transfer admittance.
| Channel type | N Channel MOS Type (1T-MOSVI) |
|---|---|
| Drain-source breakdown voltage | 20 V |
| Gate threshold voltage range | 0.5~1.1 V |
| Drain power dissipation (single-device) | 1.5 W |
| Channel temperature maximum | 150 °C |
The TPC8202 is intended for Lithium Ion Battery Applications and Portable Equipment Applications, including Notebook PCs.
The maximum pulse drain current rating for this device is 20 A.