TPC8204 is a TOSHIBA field effect transistor suitable for lithium-ion battery applications and portable equipment applications such as notebook PCs. It features a small and thin package, low drain-source ON resistance, high forward transfer admittance, and low leakage current.
This document is a technical datasheet for the Toshiba TPC8204 Field Effect Transistor (MOSFET). It specifies that this device is designed for Lithium Ion Battery Applications and Portable Equipment Applications, such as Notebook PCs. The component features a small footprint due to its thin package design.
| Drain-source voltage | 20 V |
|---|---|
| Gate threshold voltage | 0.5~1.2 V |
| Drain-source ON resistance (typ.) | 16 mQ |
| Forward transfer admittance (typ.) | 18 S |
| Leakage current (max) | 10 pA |
The device is designed for lithium ion battery applications, portable equipment, and notebook PCs.
A single device can dissipate up to 1.5 W under these conditions.
The maximum allowable channel temperature is 150 °C.