TPC8111 is a MOS field effect transistor produced by TOSHIBA. It is mainly used in lithium batteries, notebook computers and other scenes. The product has the characteristics of small size, low leakage current and high transfer gain.
This document is a technical datasheet for the Toshiba TPC8111, an enhancement-mode Silicon P-Channel MOSFET (U-MOS IV). It highlights applications in lithium-ion batteries, notebook PCs, and portable equipment. Key features include a small footprint, low drain-source ON resistance of 8.1 mΩ typical, and high forward transfer admittance.
| Drain-source voltage (VDS) | -30 V |
|---|---|
| Gate threshold voltage (Vth) | -0.8 to -2.0 V |
| Drain-source ON resistance (RDS(ON)) | 8.1 mΩ (typ.) |
| Channel temperature (Tch) | 150 °C |
The device is intended for use in lithium ion battery, notebook PC, and portable equipment applications.
The maximum drain power dissipation is 19 W when the pulse width is 10 seconds.
The thermal resistance is 65.8 °C/W when the pulse width is 10 seconds.