TPC8201 is a TOSHIBA N-channel MOSFET with low leakage current, high on-resistance and high transfer admittance. It is suitable for applications such as lithium ion batteries, portable devices and notebooks.
This document is a technical datasheet for the Toshiba TPC8201, an N-channel silicon MOS transistor (1T-MOSVI). It is specifically optimized for low drain-source ON resistance (typ. 87 mΩ) and high forward transfer admittance, making it suitable for lithium-ion battery applications, portable equipment, and notebook PCs.
The datasheet provides comprehensive electrical characteristics, maximum ratings, and thermal data at a temperature of 25°C. Key specifications include a drain-source breakdown voltage of 30V, a gate threshold voltage range of 0.8 to 2.0V, and a maximum power dissipation of 1.5W for single-device operation.
| Product Type | Silicon N Channel MOS Type (1T-MOSVI) |
|---|---|
| Drain-source ON resistance | 87 mΩ (typ.) |
| Forward transfer admittance | 6 S (typ.) |
| Leakage current | 10 pA (max) |
| Gate threshold voltage | 0.8~2.0 V |
| Maximum power dissipation (single) | 1.5 W |
The TPC8201 is intended for lithium ion battery and portable equipment applications, including notebook PCs.
The maximum drain-source voltage (Vpss) is 30 V.