TPC8203 is a N-channel MOS transistor from TOSHIBA with low RDS(ON) and high |Yfs|, suitable for notebook PCs and other portable devices.
This document is a technical datasheet for the Toshiba TPC8203, an N-channel enhancement-mode Field Effect Transistor (FET) utilizing Silicon U-MOSII technology. The device is specifically designed for applications in lithium-ion battery systems and portable equipment such as notebook PCs, leveraging its small footprint and low drain-source ON resistance.
| Drain-source voltage (VDS) | 30 V |
|---|---|
| Gate threshold voltage (Vth) | 0.8 ~ 2.5 V |
| Drain-source ON resistance (RDS(ON)) | 14 mQ (typ.) |
| Forward transfer admittance (|Yfs|) | 8 S (typ.) |
| Gate leakage current (IGSS) | 10 pA (max) |
The typical drain-source ON resistance (RDS(ON)) is 14 mΩ at a gate-source voltage of 10 V and a drain current of 3 A.
The package dimensions are 25.4 x 25.4 x 0.8 mm when mounted on a glass-epoxy board.