The TPC8209 is a N-channel MOS type field-effect transistor produced by Toshiba Corporation. It has the characteristics of miniaturization, low leakage current, high on-resistance, and is suitable for applications such as lithium batteries, portable devices, and notebook computers.
This document is a technical datasheet for the Toshiba TPC8209, an enhancement-mode Field Effect Transistor (N-Channel MOS Type U-MOS II). The device is designed for applications including lithium-ion batteries, portable equipment, and notebook PCs. It features a small footprint package with low drain-source ON resistance of 30 mΩ typical.
| Drain-source voltage (VDS) | 30 V |
|---|---|
| Gate threshold voltage (Vth) | 1.3 to 2.5 V |
| Drain-source ON resistance (RDS(on)) | 30 mΩ typ. |
| Forward transfer admittance (|Yfs|) | 10 S typ. |
| Drain power dissipation (single device) | 15 W |
It is intended for Lithium Ion Battery Applications, Portable Equipment Applications, and Notebook PC Applications.
Yes, the document states that this transistor is an electrostatic sensitive device and should be handled with caution.