TPC8208 is a Toshiba field effect transistor suitable for lithium-ion battery applications, notebook PC applications, and portable equipment applications. It features a small and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.
This document is a technical datasheet for the Toshiba TPC8208, an enhancement-mode field effect transistor (MOSFET) of the U-MOSIII series. The device features a small footprint with low drain-source ON resistance and high forward transfer admittance, making it suitable for lithium-ion battery applications, notebook PCs, and portable equipment.
| Drain-source voltage (VDS) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5 to 1.2 V |
| Drain-source ON resistance (RDS(ON)) | 38 mΩ typ. |
| Forward transfer admittance (|Yfs|) | 6.3 S typ. |
| Leakage current (Ipgg) | 10 pA max |
| Channel temperature (Tch) | 150 °C |
The TPC8208 is intended for lithium-ion battery applications, notebook PC applications, and portable equipment applications.
The maximum power dissipation (Pd) for a single device at Ta = 25°C is 1.5 W.