This document describes the features and applications of the TPC8108 field effect transistor, including its use in notebook PCs and portable equipment. The transistor has small footprint, low drain-source ON resistance, high forward transfer admittance, and low leakage current.
This document is a technical datasheet for the Toshiba TPC8108, an enhancement-mode silicon P-channel MOSFET (U-MOSIII). The device is specifically optimized for low-drain-source ON resistance and high forward transfer admittance, making it suitable for lithium-ion battery applications, notebook PCs, and portable equipment.
| Gate threshold voltage (Vth) | -0.8 to -2.0 V |
|---|---|
| Drain-source ON resistance (RDS(ON)) | 9.5 mΩ typ. |
| Forward transfer admittance (|Yfs|) | 24 S typ. |
| Leakage current (Ipgg) | -10 pA max |
This transistor is intended for use in lithium ion battery, notebook PC, and portable equipment applications.
The device can handle a single pulse avalanche energy of 157 mJ.
The maximum allowable channel temperature is 150 °C.