This document introduces the TPC8206 model of TOSHIBA field effect transistor, which is suitable for lithium-ion battery applications, notebook PC applications, and portable equipment applications. Its features include small footprint, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.
This document is a technical datasheet for the Toshiba TPC8206, an N-channel silicon Field Effect Transistor (MOS Type U-MOSII). The device is designed with applications in lithium-ion batteries, notebook PCs, and portable equipment. Key features include a small footprint due to its thin package and low drain-source ON resistance of 40 mΩ typical.
| Drain-source voltage | 60 V |
|---|---|
| Gate threshold voltage | 1.3 to 2.5 V |
| Drain-source ON resistance | 40 mΩ (typ.) |
| Forward transfer admittance | 7.0 S (typ.) |
| Leakage current | 10 pA (max) |
It is intended for Lithium ion Battery Applications, Notebook PC Applications, and Portable Equipment Applications.
The maximum channel temperature (Tch) is 150 °C.