Small footprint, low leakage current, high ON resistance
This document is a technical datasheet for the Toshiba TPC8113, an enhancement-mode Silicon P Channel MOS Type (U-MOS IV) Field Effect Transistor. It is specifically designed for Lithium Ion Battery Applications, Notebook PC Applications, and Portable Equipment Applications.
The datasheet provides comprehensive electrical characteristics including maximum ratings such as a drain-source voltage of -30V and a gate threshold voltage range of -0.8 to -2.0 V. It also details thermal resistance values, capacitance parameters, and safe operating area curves for the device.
| Drain-source voltage (VDS) | -30 V |
|---|---|
| Gate threshold voltage (Vth) | -0.8 to -2.0 V |
| Drain-source ON resistance (RDS(ON)) | 8 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 23 S (typ.) |
| Channel temperature (Tch) | 150 °C |
The maximum channel temperature rating is 150°C.
The TPC8113 is designed for lithium ion battery, notebook PC, and portable equipment applications.