This document describes the applications of 2SA1025, 2SA1081, and 2SA1082 silicon PNP epitaxial transistors, including low frequency amplifiers and complementary pairing with 2SC2396, 2SC2543, and 2SC2544.
The document provides specifications for Hitachi silicon PNP epitaxial transistors 2SA1025, 2SA1081 and 2SA1082. These devices are intended for low‑frequency amplifier applications and can be used as complementary pairs with 2SC2396, 2SC2543 and 2SC2544.
Key data include absolute maximum ratings such as collector‑to‑base voltage, collector current, junction temperature, and storage temperature, as well as detailed electrical characteristics and power‑dissipation curves. Legal and safety notices are also included.
| Collector‑to‑base voltage (V_CBO) | -60 V (2SA1025), -90 V (2SA1081), -120 V (2SA1082) |
|---|---|
| Collector‑to‑emitter voltage (V_CEO) | -60 V (2SA1025), -90 V (2SA1081), -120 V (2SA1082) |
| Maximum collector current (I_C) | 100 mA |
| Junction temperature (T_J) | 150 °C |
| Storage temperature range (T_stg) | -55 °C to +150 °C |
| Collector power dissipation (P_D) | 400 mW |
They are intended for low‑frequency amplifier circuits and can be used as complementary pairs with 2SC2396, 2SC2543 and 2SC2544.
The maximum collector‑to‑emitter voltage is –60 V for 2SA1025, –90 V for 2SA1081, and –120 V for 2SA1082.
Each device can dissipate up to 400 mW of collector power.