The document introduces the 2SA1121 Silicon PNP Epitaxial application, which is a low-frequency amplifier and complementary pair with 2SC2618. The document provides detailed information on the absolute maximum ratings and electrical characteristics of the 2SA1121.
The 2SA1121 is a silicon PNP epitaxial transistor intended for low‑frequency amplifier applications and as a complementary pair with the 2SC2618. The document lists its outline, pin configuration, and typical usage conditions.
The datasheet details absolute maximum ratings, electrical characteristics, collector power dissipation curves, and cautions regarding usage limits, radiation resistance, and intellectual‑property notices.
| Collector‑to‑base voltage (Vcbo) | -35 V |
|---|---|
| Collector‑to‑emitter voltage (Vceo) | -35 V |
| Emitter‑to‑base voltage (Vebo) | -4 V |
| Collector current (Ic) | 500 mA |
| Collector power dissipation (Pc) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
It is suitable for low‑frequency amplifiers and as a complementary pair with the 2SC2618.
The maximum collector current is 500 mA.
No, the product is not designed to be radiation resistant.