This document describes the features and characteristics of 2SA1031 and 2SA1032, including their application as low frequency low noise amplifiers, complementary pairing with 2SC458 (LG) and 2SC2310, etc.
The document provides the electrical specifications, absolute maximum ratings, and characteristic curves for the Hitachi 2SA1031 and 2SA1032 silicon PNP transistors. It includes package information (TO‑92) and application notes for low‑frequency low‑noise amplifiers.
Additional sections cover maximum collector dissipation curves, typical output and transfer characteristics, and legal cautions. Contact information for Hitachi Semiconductor worldwide is also listed.
| Collector to base voltage (VCB) | -30 V |
|---|---|
| Collector to emitter voltage (VCE) | -30 V |
| Emitter to base voltage (VEB) | -5 V |
| Collector current (IC) | 100 mA |
| Collector power dissipation (PC) | 300 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Gain bandwidth product (fT) | 200 MHz |
| Package type | TO‑92 |
The maximum collector power dissipation is 300 mW.
The device can be stored from –55 °C to +150 °C.
Both transistors are supplied in a TO‑92 package.
The gain‑bandwidth product is 200 MHz.