2SA1171 is a silicon PNP epitaxial transistor used in low frequency small signal amplifiers.
The 2SA1171 is a silicon PNP epitaxial transistor intended for low‑frequency small‑signal amplifier applications. The document lists its absolute maximum ratings, electrical characteristics, and typical performance curves.
Key specifications include voltage limits, current ratings, power dissipation, and gain bandwidth. The datasheet also contains cautions regarding intellectual‑property rights, reliability considerations, and usage limits.
| Emitter to base voltage (Vebo) | -5 V |
|---|---|
| Collector current (Ic) | 50 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| Gain‑bandwidth product (fT) | 200 MHz |
| Collector output capacitance (Ccb) | 1.6 pF |
| DC current transfer ratio (hFE) | 250 to 800 |
It is intended for low‑frequency small‑signal amplifier applications.
Yes, Hitachi states that it does not warrant IP rights, the product is not radiation‑resistant, and users must stay within the specified ratings.