2SA1052 is a silicon PNP type transistor with low frequency amplifier application
This document provides the absolute maximum ratings, electrical characteristics and thermal limits for the Hitachi 2SA1052 silicon PNP epitaxial transistor, intended for low‑frequency amplifier applications. It includes typical curves such as the maximum collector dissipation versus ambient temperature.
Additional information covers physical dimensions, weight, and extensive cautions regarding usage, licensing and reliability considerations for high‑risk applications.
| Collector‑to‑base voltage (Vcbo) | -30 V |
|---|---|
| Collector‑to‑emitter voltage (Vceo) | -30 V |
| Emitter‑to‑base voltage (Vebo) | -5 V |
| Collector current (Ic) | 100 mA |
| Emitter current (Ie) | 100 mA |
| Collector power dissipation (Pc) | 150 mW |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55 °C to +150 °C |
The maximum collector current is 100 mA.
The device can be stored from –55 °C up to +150 °C.
The collector‑to‑base breakdown voltage is –30 V.
The maximum collector power dissipation is 150 mW.