2SA1025, 2SA1081, 2SA1082 are three silicon PNP type transistors, used in low frequency amplifiers, can be used with 2SC2396, 2SC2543 and 2SC2544.
The 2SA1025, 2SA1081, and 2SA1082 are silicon PNP epitaxial transistors intended for low‑frequency amplifier applications and can be used as complementary pairs with other Hitachi devices. The document lists their pin outline and typical application notes.
Detailed absolute maximum ratings, electrical characteristics, and power‑dissipation curves are provided, along with legal and safety notices for proper use of these semiconductor products.
| Collector to base voltage (V_CBO) | -60 V (2SA1025), -90 V (2SA1081), -120 V (2SA1082) |
|---|---|
| Collector to emitter voltage (V_CEO) | -60 V (2SA1025), -90 V (2SA1081), -120 V (2SA1082) |
| Collector power dissipation | 400 mW for all models |
| Junction temperature (Tj) | 150 °C for all models |
| Storage temperature (Tstg) | -55 °C to +150 °C for all models |
| DC current transfer ratio (hFE) | 250 – 800 for all models |
| Gain‑bandwidth product (fT) | 9 MHz for all models |
| Collector‑output capacitance (Cob) | 35 pF for all models |
The 2SA1025 is rated at -60 V, the 2SA1081 at -90 V, and the 2SA1082 at -120 V.
Each device can dissipate up to 400 mW of collector power.
All three transistors may be stored from –55 °C to +150 °C.
The DC current transfer ratio ranges from 250 to 800 for each model.