2SA1031, 2SA1032 are Silicon PNP Epitaxial, applied to low frequency low noise amplifier, is the complementary pair of 2SC458 (LG) and 2SC2310
This document provides the specifications and application guidance for Hitachi 2SA1031 and 2SA1032 silicon PNP epitaxial transistors. The transistors are intended for low‑frequency, low‑noise amplifier circuits and are often used as a complementary pair with 2SC458 or 2SC2310 devices.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, DC current transfer ratios, gain‑bandwidth product, noise figure and output capacitance, as well as legal notices regarding reproduction and medical‑use restrictions.
| Collector‑to‑Base Voltage (Vcbo) | -30 V to -55 V |
|---|---|
| Collector‑to‑Emitter Voltage (Vceo) | -30 V to 50 V |
| Emitter‑to‑Base Voltage (Vebo) | -5 V |
| Collector Current (Ic) | 100 mA |
| Emitter Current (Ie) | 100 mA |
| Collector Power Dissipation (Pc) | 300 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to +150 °C |
| DC Current Transfer Ratio (hFE) | 100 – 500 (2SA1031) / 100 – 320 (2SA1032) |
| Gain‑Bandwidth Product (fT) | 200 – 280 MHz |
| Noise Figure (NF) | 6 dB (approx.) |
| Collector Output Capacitance (Ccb) | 33 pF – 40 pF |
They are intended for low‑frequency, low‑noise amplifier circuits and can be used as a complementary pair with 2SC458 or 2SC2310 transistors.
No. Hitachi’s products are not authorized for medical applications without written consent from the appropriate Hitachi sales officer.
The maximum collector‑to‑emitter voltage is -30 V to 50 V depending on the device.
The devices can be stored from –55 °C to +150 °C.