The 2SA1122 is a low frequency amplifier produced by NXP. Its maximum collector voltage is -55V, its maximum collector-emitter voltage is -55V, its maximum emitter-base voltage is -5V, its maximum collector current is -100mA, its maximum collector power dissipation is 150mW, its junction temperature is 150 °C, and its storage temperature is -55 to +150 °C.
This document presents the key specifications of the Hitachi 2SA1122 silicon PNP epitaxial transistor, including absolute maximum ratings, electrical characteristics, and a collector‑power‑dissipation curve. It also lists application guidance and a brief outline of the device.
Additional sections contain cautions regarding warranty, intellectual‑property rights, and recommended design practices for high‑reliability applications. Contact information for Hitachi Semiconductor worldwide is provided at the end of the sheet.
| Junction temperature (Tj) | 150 °C |
|---|---|
| Storage temperature (Tstg) | -55 °C to +150 °C |
The device can be stored from –55 °C up to +150 °C.