The 2SA1116 is a silicon PNP epitaxial planar transistor intended for general‑purpose applications. The document provides package dimensions, maximum voltage and current ratings, and thermal limits.
Key electrical parameters such as collector‑base voltage, collector‑emitter voltage, and switching frequency are detailed, along with recommended storage temperature ranges and power dissipation limits. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | -200 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -200 V |
| Emitter‑Base Voltage (Vebo) | -6 V |
| Maximum Collector Current (Ic) | -15 A |
| Maximum Base Current (Ib) | -5 A |
| Collector Power Dissipation (Pc) | 150 W |
| Storage Temperature Range (Ts) | -65 °C to 150 °C |
| Typical Switching Frequency | 20 MHz |
The maximum collector‑emitter voltage is 200 V.
The transistor can handle up to 15 A of collector current.
Store the device between –65 °C and 150 °C.
The typical switching frequency is 20 MHz.