The Toshiba 2SA1048 is a silicon PNP epitaxial transistor designed for low‑noise audio‑frequency amplifier applications. It offers high voltage capability and excellent linearity.
The datasheet provides maximum ratings, electrical characteristics such as a collector‑base voltage of 50 V, collector current of 150 mA, power dissipation of 200 mW, and typical performance figures like a noise figure of 0.2 dB and a current gain of 70‑400.
| Collector-Base Voltage (VcCBO) | -50 V |
|---|---|
| Collector-Emitter Voltage (VCE) | -50 V |
| Base-Emitter Voltage (VEB0) | -5 V |
| Collector Current (Ic) | 150 mA |
| Power Dissipation (Pc) | 200 mW |
| Junction Temperature (Tj) | 125 °C |
| Noise Figure (NF) | 0.2 dB (Typ.) |
The maximum collector current is 150 mA.
The typical noise figure is 0.2 dB.
The transistor can withstand up to 50 V collector‑base voltage.