Toshiba 2SA1093 PNP Transistor Datasheet

2SA1093 is a power amplifier that can be used as an audio power amplifier or as a high voltage field effect transistor.


Toshiba 2SA1093 PNP Transistor Datasheet - cover page
Brand
Toshiba
Category
Transistor
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
122 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
FFA6805FBA7E09259A231B3BF5560F1D

About this manual

The 2SA1093 is a silicon PNP epitaxial transistor intended for audio frequency power amplifier applications, with a recommended use in 50 W audio output stages. It offers high transition frequency and suitable voltage and current ratings for demanding audio circuits.

Key specifications include collector‑base and collector‑emitter voltage limits of -120 V, a maximum collector current of 8 A, a typical transition frequency of 90 MHz, and a power dissipation range of 2‑16 W. The device operates over a storage temperature range of 55‑150 °C and a junction temperature up to 150 °C.

What's inside

  • Features
  • Maximum Ratings
  • Electrical Characteristics
  • Safe Operating Area
  • Application Notes

Specifications

Collector‑Base Voltage (Vcbo)-120 V
Collector‑Emitter Voltage (Vceo)-120 V
Maximum Collector Current (Ic)8 A
Maximum Base Current (Ib)0.8 A
Transition Frequency (fT, typ.)90 MHz
Power Dissipation (Pd)2‑16 W
Junction Temperature (Tj)150 °C
Storage Temperature Range55‑150 °C

Frequently asked questions

What is the maximum collector current for the 2SA1093?

The maximum collector current is approximately 8 A.

What is the typical transition frequency (fT) of the 2SA1093?

The typical transition frequency is about 90 MHz.

What application is the 2SA1093 recommended for?

It is recommended for use in a 50 W audio amplifier output stage.

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