The Toshiba 2SA1141 (PNP) and 2SC2681 (NPN) are silicon triple‑diffused transistors intended for audio‑frequency and high‑frequency power‑amplifier applications. The document provides key electrical parameters, absolute maximum ratings, and mechanical dimensions.
Key data include voltage limits of ±115 V, a maximum collector current of 150 A, and frequency capabilities up to 80 MHz for the NPN device and 90 MHz for the PNP device. Package dimensions are given in millimetres.
| Maximum Collector Voltage | ±115 V |
|---|---|
| Frequency Range (NPN) | 80 MHz |
| Frequency Range (PNP) | 90 MHz |
The transistor can tolerate up to ±115 V collector voltage.
The NPN version operates up to 80 MHz.
The PNP version operates up to 90 MHz.