The 2SA1150 is a silicon PNP epitaxial transistor intended for low‑frequency amplifier applications. It is complementary to the 28C2710 and is supplied in a TO‑92 package.
The datasheet lists maximum ratings such as 35 V collector‑base voltage, 30 V collector‑emitter voltage, and 5 V emitter‑base voltage, with a collector current of 800 mA and a power dissipation of 300 mW. Electrical characteristics are provided for a junction temperature of 150 °C and an ambient temperature range from –55 °C to 150 °C.
| Collector-Base Voltage (VCBO) | 35 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 30 V |
| Emitter-Base Voltage (VEB0) | 5 V |
| Collector Current (IC) | 800 mA |
| Base Current (IB) | 160 mA |
| Power Dissipation (PD) | 300 mW |
The transistor is rated for a maximum collector current of 800 mA.
It can dissipate up to 300 mW of power.
Collector‑base voltage is 35 V, collector‑emitter voltage is 30 V, and emitter‑base voltage is 5 V.