This document is a datasheet for the Toshiba 2SA1145 PNP silicon epitaxial transistor (PCT process). It lists the device’s maximum voltage and current ratings, power dissipation limits, and typical electrical parameters for use in audio‑frequency amplifier applications and other circuits.
Key specifications include a collector‑base voltage of 150 V, collector‑emitter voltage of 150 V, emitter‑base voltage of 5 V, and a typical transition frequency of 200 MHz. The sheet also gives storage temperature ranges, junction temperature limits, and typical capacitance values, helping designers ensure reliable operation within the specified limits.
| Collector‑Base Voltage (VCBO) | 150 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 150 V |
| Emitter‑Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 50 mA |
| Base Current (IB) | 5 mA |
| Power Dissipation (PD) | 800 mW |
| Junction Temperature (TJ) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| Transition Frequency (fT) | 200 MHz |
The maximum collector current is 50 mA.
The typical transition frequency is 200 MHz.
Collector‑Base voltage is 150 V, collector‑emitter voltage is 150 V, and emitter‑base voltage is 5 V.
The device can be stored from –55 °C to 150 °C.