This document describes the Toshiba 2SA1160 PNP epitaxial transistor, covering its typical applications such as strobe flash and medium‑power amplifiers. It includes safety and reliability notes for designers using the device.
Key specifications such as voltage ratings, current gain, power dissipation, and temperature limits are listed, along with characteristic curves and safe operating area information to aid circuit design.
| Collector‑Base Voltage (VcBO) | 20 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 10 V |
| Emitter‑Base Voltage (VEBO) | 6 V |
| Maximum Power Dissipation | 900 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| DC Current Gain hFE(2) (typ.) | 120 |
The maximum collector‑emitter voltage is 10 V.
The device can be stored from –55 °C to 150 °C.
Typical hFE is 120, with a minimum of 60.
The transistor can dissipate up to 900 mW.