The 2SA1091 is a silicon PNP transistor designed for high‑voltage control applications such as plasma displays, nixie tube drivers, and cathode‑ray tube brightness control. It features a maximum collector‑base voltage of 300 V, a collector‑emitter voltage of 300 V, and a low saturation voltage of 0.5 V.
Key electrical characteristics include a collector current of 100 mA, base current of 20 mA, power dissipation of 400 mW, and a typical collector output capacitance of 6 pF. The device operates from –55 °C to 150 °C storage temperature and has a junction temperature rating of 150 °C.
| Collector‑Base Voltage (VCBO) | 300 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 300 V |
| Emitter‑Base Voltage (VEB) | 8 V |
| Saturation Voltage (VCE(sat)) | 0.5 V (max) |
| Collector Current (Ic) | 100 mA |
| Base Current (Ip) | 20 mA |
| Power Dissipation (Po) | 400 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| Typical Collector Output Capacitance (Ccb) | 6 pF |
The maximum collector‑emitter voltage (VCEO) is 300 V.
The typical collector output capacitance is 6 pF.
The saturation voltage (VCE(sat)) is 0.5 V (maximum) at 20 mA.
It can be stored from –55 °C to 150 °C.