The Toshiba 2SA1049 is a silicon PNP epitaxial transistor intended for audio‑frequency amplifier applications. It offers high linearity, low noise, and a wide frequency range suitable for high‑performance audio circuits.
Key ratings include a collector‑base voltage of -120 V, collector‑emitter voltage of -120 V, emitter‑base voltage of -5 V, and a maximum collector current of 100 mA. The device dissipates up to 200 mW, operates from -55 °C to 125 °C storage temperature, and features a typical noise figure of 1 dB.
| Collector‑Base Voltage (VCBO) | -120 V (Min) |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -120 V (Min) |
| Emitter‑Base Voltage (VEB0) | -5 V (Min) |
| Collector Current (Ic) | 100 mA |
| Base Current (Ib) | 20 mA |
| Power Dissipation (Pc) | 200 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| Noise Figure (NF) | 1 dB (Typ.), 10 dB (Max) |
The maximum collector current is 100 mA.
The typical noise figure is 1 dB (maximum 10 dB).