This document is a datasheet for the Panasonic 2SA1110 PNP epitaxial planar transistor. It lists the device's absolute maximum ratings, electrical characteristics, and mechanical dimensions.
The same handbook also includes data for related devices such as the 2SA1125 and 2SA1254, which share similar construction and are intended for low‑frequency power amplification applications. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 120 V |
|---|---|
| Emitter‑Base Voltage (Vebo) | 5 V |
| Maximum Collector Current (Ic) | 0.5 A |
| Collector Power Dissipation (Pc) | 1.2 W |
The maximum collector current is 0.5 A.
The collector‑base voltage rating is 120 V.
The transistor is supplied in a JEDEC TO‑126 package.