The 2SA1115 is a silicon PNP transistor designed for low‑frequency voltage amplification. It features a small, sealed package suitable for high‑density mounting and offers good linearity of DC current gain.
Key specifications include a collector‑emitter voltage of 50 V, a maximum collector current of 200 mA, low saturation voltage (0.3 V at 100 mA), and a wide storage temperature range of –55 °C to 125 °C. The device is intended for use in compact equipment requiring low‑frequency amplification. This manual is written in Japanese.
| Collector‑Emitter Voltage (VCEO) | -50 V |
|---|---|
| Collector Current (IC) | -200 mA |
| Collector Power Dissipation (PC) | 300 mW |
| Storage Temperature (Tstg) | -55 °C to 125 °C |
| DC Current Gain (hFE) Ranges | 90‑160, 150‑300, 250‑500, 400‑800 |
The maximum collector‑emitter voltage is 50 V.
It is intended for low‑frequency voltage amplification in small‑size equipment.