The 2SA1135 is a silicon PNP epitaxial mesa transistor designed for general‑purpose applications. It is complementary to the 2SC2665 NPN device and is supplied in a resin‑molded case.
Key specifications include a collector‑base voltage of 80 V, collector‑emitter voltage of 80 V, emitter‑base voltage of 6 V, a maximum collector current of 4 A, and a power dissipation rating of 55 W. The device meets UL‑94 V‑0 flammability standards and operates over a storage temperature range of –55 °C to 150 °C. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 80 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 80 V |
| Emitter‑Base Voltage (Vebo) | 6 V |
| Collector Current (Ic) | 4 A |
| Base Current (Ib) | 1 A |
| Maximum Power Dissipation (Pc) | 55 W |
| Storage Temperature Range (Ts) | -55 °C to 150 °C |
| Typical Switching Frequency (f_r) | 10 MHz |
The maximum collector current is 4 A.
The collector‑emitter voltage rating is 80 V.
The device can dissipate up to 55 W under the specified conditions.
It can be stored from –55 °C to 150 °C.