The product is a 256K x 8 bit ultra low power/voltage CMOS SRAM with a wide voltage range, ultra low power consumption, high speed read/write, automatic power down function, three-state output, TTL compatibility, and full static operation.
The BS62UV2006 is a 256K × 8‑bit static RAM offering ultra‑low power consumption and a wide supply voltage range. It features automatic power‑down, three‑state TTL‑compatible outputs, and is available in DICE, SOP‑32, TSOP‑32 and small‑TSOP packages.
The datasheet provides detailed electrical characteristics, timing diagrams for read and write cycles, pin configurations, and ordering information, helping designers integrate the device into low‑power applications.
| Supply voltage range | 1.8 V ~ 3.6 V |
|---|---|
| Standby current (CMOS) | 0.20 µA typ. at 2.0 V |
| Maximum operating current (C‑grade, 2.0 V) | 8 mA |
| Maximum operating current (‑grade, 2.0 V) | 10 mA |
| Access time (max) | 85 ns |
| Data retention supply voltage | as low as 1.0 V |
It operates from 1.8 V to 3.6 V, with a C‑grade range of 1.8 V ~ 3.6 V.
The typical CMOS standby current is 0.20 µA at 2.0 V.
The maximum access time is 85 ns.