This document describes a high-performance, ultra-low power CMOS Static Random Access Memory called BS62UV2006, which features wide voltage operation range, ultra-low power consumption, high-speed access time, and automatic power down.
The BS62UV2006 is a high‑performance, ultra‑low‑power CMOS static RAM organized as 262,144 words by 8 bits. It operates from a wide supply range of 1.8 V to 3.6 V and offers fast access times of up to 85 ns while consuming as little as 0.20 µA standby current.
The device is offered in multiple package options, including DICE, SOP‑32, small TSOP‑32 (8 mm × 13.4 mm) and standard TSOP‑32 (8 mm × 20 mm). Pin enable options (CE1, CE2, OE) allow flexible memory expansion, and an automatic power‑down feature reduces consumption when the chip is deselected.
| Memory size | 262,144 words × 8 bits |
|---|---|
| Supply voltage range | 1.8 V ~ 3.6 V |
| Typical standby current | 0.20 µA (typ.) at 2.0 V |
| Maximum operating current (C‑grade, 2.0 V) | 8 mA |
| Maximum access time | 85 ns (max) |
The typical CMOS standby current is 0.20 µA at 2.0 V/25 °C.
It operates from 1.8 V to 3.6 V.
The maximum access time is 85 ns.